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Si4730/31-D50
1. Electrical Specifications
Table 1. Recommended Operating Conditions*
Parameter
Analog Supply Voltage
Digital and I/O Supply Voltage
Analog Power Supply Powerup Rise
Time
Digital Power Supply Powerup Rise
Time
Ambient Temperature
Symbol
V A
V D
V ARISE
V DRISE
T A
Test Condition
Min
2.7
1.62
10
10
–20
Typ
—
—
—
—
25
Max
5.5
3.6
—
—
85
Unit
V
V
μs
μs
? C
*Note: All minimum and maximum specifications are guaranteed and apply across the recommended operating conditions.
Typical values apply at V A = 3.3 V and 25 ? C unless otherwise stated. Parameters are tested in production unless
otherwise stated.
Table 2. Absolute Maximum Ratings 1,2
Parameter
Analog Supply Voltage
Digital and I/O Supply Voltage
Symbol
V A
V D
Value
–0.5 to 5.8
–0.5 to 3.9
Unit
V
V
Input
Current 3
I IN
10
mA
Input Voltage 3
Operating Temperature
Storage Temperature
V IN
T OP
T STG
–0.3 to (V IO + 0.3)
–40 to 95
–55 to 150
V
? C
? C
RF Input
Level 4
0.4
V pK
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure beyond
recommended operating conditions for extended periods may affect device reliability.
2. The Si4730/31 device is a high-performance RF integrated circuit with certain pins having an ESD rating of < 2 kV
HBM. Handling and assembly of these devices should only be done at ESD-protected workstations.
3. For input pins DFS, SCLK, SEN, SDIO, RST, RCLK, GPO1, GPO2, GPO3, and DCLK.
4. At RF input pins FMI and AMI.
4
Rev. 1.0
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